Lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L

Lineup expansion of small, low On-resistance common-drain mosfet products helping battery-driven devices operate for longer periods of time : SSM10N954L

Lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L

Notes :
[1] Comparison with the product of the same maximum rating, according to a survey by Toshiba as of March 2021.

Features

  • Industry-leading[1] low On-resistance : RSS(ON)=2.2 mΩ (typ.) @VGS=3.8 V
  • Industry-leading[1] low gate-source leakage current : IGSS=±1 µA (max) @VGS=±8 V
  • Small size surface mounting TCSPAC-153001 package : 1.49 mm × 2.98 mm, t : 0.11 mm (typ.)
  • Common-drain structure that can be easily used in battery protection circuits

Applications

Devices with a Li-ion battery pack

  • Office and personal devices (Smartphones, tablets, power banks and wearable devices, etc.)
  • Consumer electronics devices (Game consoles, electric toothbrushes, compact digital cameras and digital single-lens reflex cameras, etc.)

Product Specifications

(@Ta=25 °C)

Notes :
[2] Previously released product

Equivalent circuit

Lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L

Application Circuit Example

Lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.